The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
May. 20, 2014
Korea Institute of Science and Technology, Seoul, KR;
Chulki Kim, Samcheok-si, KR;
Yeong Jun Kim, Seoul, KR;
Young Mo Jung, Goyang-si, KR;
Seong Chan Jun, Seoul, KR;
Taikjin Lee, Seoul, KR;
Seok Lee, Seoul, KR;
Young Tae Byun, Guri-si, KR;
Deok Ha Woo, Seoul, KR;
Sun Ho Kim, Seoul, KR;
Min Ah Seo, Seoul, KR;
Jae Hun Kim, Seoul, KR;
Jong Chang Yi, Seoul, KR;
Korea Institute of Science and Technology, Seoul, KR;
Abstract
A method for forming a PN junction in graphene includes: forming a graphene layer, and forming a DNA molecule layer on a partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the graphene layer with a predetermined doping property upon adsorption on the graphene layer. The DNA molecule has a nucleotide sequence structure designed for doping of graphene so that doped graphene has a specific semiconductor property. The DNA molecule is coated on the surface of the graphene layer of which the partial region is exposed by micro patterning, and thereby, PN junctions of various structures may be formed by a region coated with the DNA molecule and a non-coated region in the graphene layer.