The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

Mar. 11, 2016
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Eiji Kitagawa, Yokohama, JP;

Takao Ochiai, Funabashi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01F 10/30 (2006.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01F 10/30 (2013.01); H01F 10/3286 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

A magnetoresistive element according to an embodiment includes: a first layer containing nitrogen; a reference layer opposed to the first layer, the reference layer having a magnetization perpendicular to a face thereof opposed to the first layer, the magnetization of the reference layer being fixed; a storage layer disposed between the first layer and the reference layer, the storage layer having a magnetization perpendicular to a face thereof opposed to the first layer, the magnetization of the storage layer being changeable, and the storage layer including a second layer containing boron, and a third layer disposed between the second layer and the reference layer and containing boron, a boron concentration of the third layer being lower than a boron concentration of the second layer; and an intermediate layer disposed between the third layer and the reference.


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