The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

Mar. 08, 2016
Applicant:

Pacific Light Technologies Corp., Portland, OR (US);

Inventors:

Brian Theobald, Gladstone, OR (US);

Matthew Bertram, Portland, OR (US);

Weiwen Zhao, Happy Valley, OR (US);

Juanita N. Kurtin, Hillsboro, OR (US);

Norbert Puetz, Ottawa, CA;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); H01L 33/56 (2010.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/502 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); Y10S 977/774 (2013.01); Y10S 977/824 (2013.01); Y10S 977/893 (2013.01); Y10S 977/95 (2013.01);
Abstract

Fabricating a semiconductor structure including forming a nanocrystalline core from a first semiconductor material, forming a nanocrystalline shell from a second, different, semiconductor material that at least partially surrounds the nanocrystalline core, wherein the nanocrystalline core and the nanocrystalline shell form a quantum dot. Fabrication further involves forming an insulator layer encapsulating the quantum dot to create a coated quantum dot, and forming an additional insulator layer on the coated quantum dot using an Atomic Layer Deposition (ALD) process.


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