The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

Jun. 11, 2014
Applicant:

Soraa, Inc., Fremont, CA (US);

Inventors:

James W. Raring, Goleta, CA (US);

Christiane Elsass, Goleta, CA (US);

Assignee:

Soraa, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/18 (2010.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 33/00 (2010.01); H01S 5/32 (2006.01); H01S 5/323 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/18 (2013.01); H01L 33/24 (2013.01); H01S 5/3202 (2013.01); H01S 5/32341 (2013.01); H01S 5/34333 (2013.01); H01S 2304/04 (2013.01);
Abstract

Optical devices such as LEDs and lasers are discloses. The devices include a non-polar gallium nitride substrate member having an off-axis non-polar oriented crystalline surface plane. The off-axis non-polar oriented crystalline surface plane can be up to about −0.6 degrees in a c-plane direction and up to about −20 degrees in a c-plane direction in certain embodiments. In certain embodiments, a gallium nitride containing epitaxial layer is formed overlying the off-axis non-polar oriented crystalline surface plane. In certain embodiments, devices include a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks.


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