The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

Apr. 24, 2014
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Yi-Ming Chen, Hsinchu, TW;

Hao-Min Ku, Hsinchu, TW;

Chih-Chiang Lu, Hsinchu, TW;

Tzu-Chieh Hsu, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/10 (2010.01); H01L 33/26 (2010.01); H01L 33/40 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/10 (2013.01); H01L 33/405 (2013.01); H01L 33/38 (2013.01);
Abstract

This disclosure discloses a light-emitting device. The light-emitting device comprise a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active formed between the first-type semiconductor layer and the second-type semiconductor layer and emitting a light; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface; wherein the critical angle of the light at the first interface is larger than that at the second interface; and wherein the reflective structure ohmically contacts the first-type semiconductor layer at the first interface.


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