The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Nov. 04, 2013
Applicant:
Apple Inc., Cupertino, CA (US);
Inventors:
Hsin-Hua Hu, Los Altos, CA (US);
Andreas Bibl, Los Altos, CA (US);
John A. Higginson, Santa Clara, CA (US);
Hung-Fai Stephen Law, Los Altos, CA (US);
Assignee:
Apple Inc., Cupertino, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/18 (2006.01); H01L 33/08 (2010.01); H01L 23/00 (2006.01); H01L 33/00 (2010.01); H01L 33/40 (2010.01); H01L 21/67 (2006.01); H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
H01L 33/08 (2013.01); H01L 24/75 (2013.01); H01L 24/83 (2013.01); H01L 24/95 (2013.01); H01L 33/0079 (2013.01); H01L 33/405 (2013.01); H01L 21/67144 (2013.01); H01L 27/156 (2013.01); H01L 2224/7598 (2013.01); H01L 2224/83 (2013.01); H01L 2224/95145 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01);
Abstract
A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.