The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
May. 29, 2015
Applicant:
Japan Display Inc., Minato-ku, JP;
Inventors:
Miyuki Ishikawa, Tokyo, JP;
Arichika Ishida, Tokyo, JP;
Masayoshi Fuchi, Tokyo, JP;
Hajime Watakabe, Tokyo, JP;
Takashi Okada, Tokyo, JP;
Assignee:
Japan Display Inc., Minato-ku, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 21/441 (2006.01); H01L 21/465 (2006.01); H01L 21/467 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/441 (2013.01); H01L 21/465 (2013.01); H01L 21/467 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 27/3272 (2013.01); H01L 29/41733 (2013.01); H01L 29/66969 (2013.01); H01L 29/78603 (2013.01); H01L 29/78633 (2013.01); H01L 29/78696 (2013.01);
Abstract
According to one embodiment, a semiconductor device includes contact holes passing through a source region of a drain region of an interlayer insulating film and oxide semiconductor layer to reach an insulating substrate, wherein a source electrode and a drain electrode are formed inside the contact holes, respectively.