The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
May. 23, 2013
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventors:
Junji Kotani, Isehara, JP;
Norikazu Nakamura, Sagamihara, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/20 (2006.01); H03F 3/16 (2006.01); H02M 3/335 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H03F 1/32 (2006.01); H02M 3/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02579 (2013.01); H01L 29/1075 (2013.01); H01L 29/36 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01); H02M 3/335 (2013.01); H03F 1/3247 (2013.01); H03F 3/16 (2013.01); H02M 3/28 (2013.01);
Abstract
A compound semiconductor device includes: a compound semiconductor multilayer structure including a first buffer layer composed of AlN; and a second buffer layer composed of AlGaN and formed above the first buffer layer, wherein the second buffer layer contains carbon, and wherein the concentration of carbon in the second buffer layer increases with increasing distance from a lower surface of the second buffer layer toward an upper surface of the second buffer layer.