The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

Oct. 08, 2014
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventor:

Yu-Jin Kim, Icheon-Si, KR;

Assignee:

SK hynix Inc., Icheon-Si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 12/08 (2016.01); G06F 13/28 (2006.01); H01L 27/22 (2006.01); H01L 45/00 (2006.01); H01L 29/423 (2006.01); H01L 45/02 (2006.01); H01L 29/06 (2006.01); G06F 12/0868 (2016.01); H01L 29/66 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G06F 12/0868 (2013.01); G06F 13/28 (2013.01); H01L 29/0653 (2013.01); H01L 29/4236 (2013.01); H01L 29/66621 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); G06F 2212/604 (2013.01); H01L 45/04 (2013.01);
Abstract

This technology provides an electronic device and a method of fabricating the same. An electronic device in accordance with an implementation of this document includes a transistor comprising a semiconductor substrate including an active region defined by an isolation layer; and a gate which is formed over the active region and the isolation layer and extends in a first direction to cross the active region, wherein the active region includes a head portion towering over the isolation layer, a body portion disposed under the head portion, and a neck portion which is disposed between the head portion and the body portion and is recessed compared to the head portion and the body portion in the first direction, in a region where the gate and the active region overlap with each other.


Find Patent Forward Citations

Loading…