The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Dec. 06, 2016
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventor:
Toshiyuki Ogawa, Abiko, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/788 (2006.01); H01L 31/0232 (2014.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14689 (2013.01); H01L 27/1463 (2013.01); H01L 27/14603 (2013.01); H01L 27/14614 (2013.01); H01L 27/14643 (2013.01);
Abstract
A method of manufacturing a photoelectric conversion apparatus includes forming a first semiconductor region of a first conductivity type in a trench provided in a semiconductor substrate, forming an insulating member on the semiconductor substrate, and forming a second semiconductor region of a second conductivity type that forms a photoelectric conversion portion. The first semiconductor region is present between the second semiconductor region and the insulating member in a direction perpendicular to a depth direction of the semiconductor substrate.