The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Jul. 28, 2016
Rohm Co., Ltd., Kyoto, JP;
Yuichi Nakao, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A semiconductor device includes a lower electrode, a ferroelectric film on the lower electrode, an upper electrode on the ferroelectric film, and a first insulating film covering a surface and a side of the upper electrode, a side of the ferroelectric film, and a side of the lower electrode. The first insulating film includes a first opening that exposes a portion of the surface of the upper electrode. A second insulating film covers the first insulating film and includes a second opening that exposes the portion of the surface of the upper electrode through a second opening. A barrier metal is formed in the first opening and the second opening, and is connected to the upper electrode. A connection region in which a material of the barrier metal interacts with a material of the upper electrode extends below an upper-most surface of the upper electrode.