The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Aug. 12, 2016
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Qiuming Huang, Shanghai, CN;
Jun Tan, Shanghai, CN;
Jianqin Gao, Shanghai, CN;
Jian Zhong, Shanghai, CN;
SHANGHAI HUALI MICROELECTRONICS CORPORATION, Shanghai, CN;
Abstract
A method of fabricating a semiconductor device is disclosed. The method includes the steps of forming recesses in a semiconductor substrate; epitaxial growing a first SiGe seed layer with constant Ge content in the recesses; epitaxial growing a second SiGe layer with a constant Ge content higher than the Ge content of first SiGe seed layer on the first SiGe seed layer; epitaxial growing a third SiGe layer with a constant Ge content lower than the Ge content of the second SiGe layer; and forming a cap layer on the third SiGe layer.