The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Sep. 21, 2016
Applicant:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Inventors:
Masanori Nakayama, Toyama, JP;
Hiroto Igawa, Toyama, JP;
Assignee:
HITACHI KOKUSAI ELECTRIC INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1085 (2013.01); H01L 21/02175 (2013.01); H01L 21/02244 (2013.01); H01L 21/02247 (2013.01); H01L 21/02252 (2013.01);
Abstract
A semiconductor manufacturing method includes preparing a substrate having a metal film formed on a surface thereof; forming an oxide layer by oxidizing a surface of the metal film by plasma of a mixed gas of an oxygen-containing gas and a hydrogen-containing gas; and forming a thin film on the oxide layer by supplying at least an oxidizing gas to the substrate.