The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

May. 31, 2016
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Ricky Alan Jackson, Richardson, TX (US);

Erika Lynn Mazotti, San Martin, CA (US);

Sudtida Lavangkul, Richardson, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/00 (2006.01); H01L 23/544 (2006.01); H01L 23/31 (2006.01); H01L 21/66 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/78 (2013.01); H01L 22/32 (2013.01); H01L 23/3171 (2013.01); H01L 23/544 (2013.01); H01L 2223/5446 (2013.01);
Abstract

An example apparatus includes a semiconductor wafer with a plurality of probe pads each formed centered in scribe streets and intersected by saw kerf lanes. Each probe pad includes a plurality of lower level conductor layers arranged in lower level conductor frames, a plurality of lower level vias extending vertically through lower level insulator layers and electrically coupling the lower level conductor frames; a plurality of upper level conductor layers, each forming two portions on two outer edges of the probe pad, the two portions aligned with, spaced from, and on opposite sides of the saw kerf lane, the coverage of the upper level conductor layers being less than about twenty percent; and a plurality of upper level vias extending vertically through upper level insulator layers and coupling the upper level conductor layers electrically to one another and to the lower level conductor layers. Methods are disclosed.


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