The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Jun. 22, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventor:
Dong-Kwon Kim, Gimcheon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/70 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/76264 (2013.01); H01L 29/0649 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01);
Abstract
A method of fabricating a semiconductor device is provided as follows. An epitaxial layer is formed on an active fin structure. Metal gate electrodes are formed on the active fin structure. Gate electrode caps are formed on upper surfaces of the metal gate electrodes. Metal gate spacers are formed on sidewalls of the metal gate electrodes. A source/drain electrode is formed on the epitaxial layer. An air spacer region is formed by removing the metal gate electrode caps and the metal gate spacers. An air spacer is formed within the air spacer region.