The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Sep. 08, 2016
Wafertech, Llc, Camas, WA (US);
WAFERTECH, LLC, Camas, WA (US);
Abstract
Provided is a split-gate embedded flash memory cell and method for forming the same. The flash memory cell includes split-gate transistors in which the control gate is aligned with respect to the floating gate without the use of a photolithographic patterning operation to pattern the material from which the control gates are formed. An anisotropic blanket etching operation is used to form the floating gates of the split-gate floating gate transistors alongside sidewalls of a sacrificial layer. Local oxidation of silicon (LOCOS) methods are not needed to form the inter-gate dielectric and therefore high integrity is maintained for the floating transistor gates. The floating transistor gates are formed of charge storage material such as silicon nitride, SiNin some embodiments.