The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

Feb. 24, 2017
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo-shi, Kyoto-fu, JP;

Inventors:

Takashi Omori, Nagaokakyo, JP;

Seiji Koga, Nagaokakyo, JP;

Jun Ikeda, Nagaokakyo, JP;

Assignee:

MURATA MANUFATURING CO., LTD., Nagaokakyo-Shi Kyoto-Fu, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/228 (2006.01); H01G 4/00 (2006.01); H01G 4/30 (2006.01); H01G 4/008 (2006.01); H01G 4/12 (2006.01); H01G 4/248 (2006.01); H01G 4/232 (2006.01); H01G 4/012 (2006.01);
U.S. Cl.
CPC ...
H01G 4/30 (2013.01); H01G 4/008 (2013.01); H01G 4/012 (2013.01); H01G 4/1227 (2013.01); H01G 4/2325 (2013.01); H01G 4/248 (2013.01);
Abstract

A monolithic ceramic electronic component having outer electrodes that include an inorganic substance containing at least Si, a crystal phase C containing at least Si, Ti, and Ba at the interfaces to a ceramic layer in peripheral end portions of the outer electrodes. A value of the crystal phase area ratio indicating the relationship between the area of the crystal phase C and the area of a glass phase G, which are formed at the interface to the ceramic layer, in a region within 5 μm from the peripheral end portion of the outer electrode is within a range of 75% to 98%.


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