The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Feb. 02, 2017
Sandisk Technologies Llc, Plano, TX (US);
Noriyuki Mitsuhira, Ofuna, JP;
Chun-Hung Lai, Kamakura, JP;
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Abstract
Systems and methods for reducing trapped electrons within a NAND string are described. During a sensing operation, one or more control circuits may discharge or initiate discharge of control gates corresponding with contiguous memory cell transistors of a NAND string from a read pass voltage (e.g., 10V) to a second voltage less than the pass voltage (e.g., 2V) in an order starting from a first set of the contiguous memory cell transistors closest to the first end of the NAND string and ending with a second set of the contiguous memory cell transistors closest to the second end of the NAND string. Subsequently, the one or more control circuits may either concurrently or simultaneously discharge the control gates corresponding with the contiguous memory cell transistors from the second voltage to a third voltage less than the intermediate voltage (e.g., from 2V to 0V).