The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

Oct. 27, 2016
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Jung-Hyun Kim, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/408 (2006.01); G11C 11/406 (2006.01); G11C 11/4076 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0033 (2013.01); G11C 11/406 (2013.01); G11C 11/4076 (2013.01); G11C 11/4085 (2013.01); G11C 11/40611 (2013.01); G11C 11/40622 (2013.01); G11C 2211/401 (2013.01); G11C 2211/406 (2013.01);
Abstract

A semiconductor memory device includes: a memory cell array including a plurality of word lines; a word line driving unit suitable for activating a first word line among the plurality of word lines corresponding to an input address signal; an activation time detection unit suitable for enabling a detection signal by detecting an activation time of the first word line; an address latch unit suitable for latching an address information for a second word line corresponding to the first word line in response to the detection signal; and an address output unit suitable for providing the word line driving unit with the latched address information for the second word line during a refresh operation.


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