The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Mar. 21, 2017
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/419 (2006.01); G11C 11/412 (2006.01); G11C 11/413 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 11/412 (2013.01); G11C 11/413 (2013.01);
Abstract
When a screening test at a normal temperature is performed instead of a low temperature screening test of SRAM, overkill is reduced and risk of outflow of defects due to local variation is suppressed. An SRAM including a word line, a bit line pair, a memory cell, and a drive circuit that drives the bit line pair is provided with a function that can drive one bit line of the bit line pair at a high level (VDD) potential and drive the other bit line at an intermediate potential (VSS+several tens mV to one handled and several tens mV) a little higher than a low level (VSS) potential for normal writing when writing data into the memory cell.