The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

Sep. 18, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Chul-sung Park, Seoul, KR;

Joo-sun Choi, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G11C 11/56 (2006.01); G11C 7/10 (2006.01); G11C 8/10 (2006.01);
U.S. Cl.
CPC ...
G06F 3/061 (2013.01); G06F 3/0659 (2013.01); G06F 3/0688 (2013.01); G11C 7/10 (2013.01); G11C 8/10 (2013.01); G11C 11/56 (2013.01); G11C 11/565 (2013.01); G11C 11/5607 (2013.01); G11C 11/5621 (2013.01); G11C 11/5678 (2013.01); G11C 11/5685 (2013.01); G11C 2211/5641 (2013.01); G11C 2213/71 (2013.01);
Abstract

A memory chip, a memory system, and a method of accessing the memory chip. The memory chip includes a substrate, a first storage unit, and a second storage unit. The first storage unit includes a plurality of first memory cells may have a first storage capacity of 2. The plurality of first memory cells may be configured to activate in response to a first selection signal. The second storage unit includes a plurality of second memory cells and may have a second storage capacity of 2. The plurality of second memory cells may be configured to activate in response to a second selection signal.


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