The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Jun. 12, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
DoYoung Kim, Hwaseong-si, KR;
Kyoungsil Park, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); G03F 7/32 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
G03F 7/32 (2013.01); H01L 21/0271 (2013.01); H01L 21/0274 (2013.01); H01L 21/0337 (2013.01); H01L 21/311 (2013.01); H01L 21/31058 (2013.01); H01L 21/31144 (2013.01);
Abstract
Methods of fabricating semiconductor devices may include forming a hardmask layer including a photosensitive hardmask material on lower structures. The hardmask layer may include a lower portion and an upper portion thereon. An exposing and developing process may be performed on the hardmask layer to remove the upper portion of the hardmask layer and thereby form a hardmask structure with a substantially flat top surface.