The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

May. 07, 2014
Applicant:

Hewlett Packard Enterprise Development Lp, Houston, TX (US);

Inventors:

Zhihong Huang, Palo Alto, CA (US);

Di Liang, Santa Barbara, CA (US);

Zhen Peng, Foster City, CA (US);

Raymond G Beausoleil, Seattle, WA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/035 (2006.01); G02F 1/065 (2006.01); G02B 6/122 (2006.01); G02B 6/293 (2006.01); G02F 1/00 (2006.01); G02F 1/025 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02F 1/065 (2013.01); G02B 6/122 (2013.01); G02B 6/29341 (2013.01); G02F 1/0018 (2013.01); G02F 1/025 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12085 (2013.01); G02B 2006/12142 (2013.01); G02F 2201/12 (2013.01); G02F 2202/022 (2013.01); G02F 2202/103 (2013.01); G02F 2202/105 (2013.01); G02F 2203/055 (2013.01); G02F 2203/15 (2013.01);
Abstract

A polymer-clad optical modulator includes a substrate comprising an insulating material; a silicon microring on the substrate; silicon waveguides on the substrate adjacent the silicon microring; an electro-optic polymer covering the silicon microring and the silicon waveguide; and an electrical contact on top of the electro-optic polymer. The silicon microring or a portion of an adjacent silicon layer is lightly doped. A polymer-clad depletion type optical modulator and a polymer-clad carrier injection type optical modulator, each employing the lightly doped silicon microring or an adjacent lightly doped silicon layer, are also described.


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