The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

Feb. 20, 2014
Applicants:

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Photonics Electronics Technology Research Association, Tokyo, JP;

Inventors:

Toshihiro Kamei, Ibaraki, JP;

Ryohei Takei, Ibaraki, JP;

Masahiko Mori, Ibaraki, JP;

Youichi Sakakibara, Ibaraki, JP;

Junichi Fujikata, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/035 (2006.01); G02F 1/025 (2006.01); G02F 1/015 (2006.01);
U.S. Cl.
CPC ...
G02F 1/025 (2013.01); G02F 2001/0151 (2013.01); G02F 2202/103 (2013.01); G02F 2202/105 (2013.01);
Abstract

An electro-optical modulator includes a substrate; an optical waveguide formed of a silicon-containing i-type amorphous semiconductoron the substrate; and a silicon-containing p-type semiconductor layerand a silicon-containing n-type semiconductor layerarranged apart from each other with the silicon-containing optical waveguide formed of an i-type amorphous semiconductorinterposed therebetween and constituting optical waveguides together with the silicon-containing optical waveguide formed of an i-type amorphous semiconductor. The silicon-containing p-type semiconductor layerand/or silicon-containing n-type semiconductor layerarea crystalline semiconductor layer.


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