The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Mar. 15, 2016
Applicant:
Sii Semiconductor Corporation, Chiba-shi, Chiba, JP;
Inventor:
Toshiyuki Tsuzaki, Chiba, JP;
Assignee:
SII SEMICONDUCTOR CORPORATION, Chiba, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 19/00 (2006.01); G01R 31/02 (2006.01);
U.S. Cl.
CPC ...
G01R 19/0092 (2013.01); G01R 31/025 (2013.01);
Abstract
To provide a current detection circuit which suppresses a change in characteristics of a PMOS transistor on the non-inversion input terminal side of a differential amplifier due to NBTI and causes no change in threshold value at which an output voltage of the current detection circuit is inverted. A voltage limiting circuit which limits a voltage drop is provided between a non-inversion input terminal of a differential amplifier and a source of a PMOS transistor on the inversion input terminal side.