The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

Aug. 04, 2015
Applicant:

Heraeus Quarzglas Gmbh & Co. KG, Hanau, DE;

Inventors:

Christian Schenk, Ingelheim, DE;

Gerrit Scheich, Seligenstadt, DE;

Nils-Christian Nielsen, Schlangenbad, DE;

Walter Lehmann, Leipzig, DE;

Bernhard Freudenberg, Coburg, DE;

Kaspars Dadzis, Freiberg, DE;

Sandra Nadolny, Freiberg, DE;

Franziska Wolny, Dresden, DE;

Gerd Fischer, Dohna, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 11/00 (2006.01); C03B 19/09 (2006.01); C30B 35/00 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 11/002 (2013.01); C03B 19/09 (2013.01); C30B 11/003 (2013.01); C30B 29/06 (2013.01); C30B 35/002 (2013.01); C03B 2201/03 (2013.01);
Abstract

A method for producing a solar crucible includes providing a crucible base body of transparent or opaque fused silica having an inner wall, providing a dispersion containing amorphous SiOparticles, applying a SiO-containing slip layer to at least a part of the inner wall by using the dispersion, drying the slip layer to form a SiO-containing grain layer and thermally densifying the SiO-containing grain layer to form a diffusion barrier layer. The dispersion contains a dispersion liquid and amorphous SiOparticles that form a coarse fraction and a fine fraction with SiOnanoparticles. The weight percentage of the SiOnanoparticles based on the solids content of the dispersion is in the range between 2 and 15% by weight. The SiO-containing grain layer is thermally densified into the diffusion barrier layer through the heating up of the silicon in the crystal growing process.


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