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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9828669 B1

PDFFull Text
Date of Patent:
Nov. 28, 2017

Filed:

Sep. 14, 2015

Microwave rapid thermal processing of electrochemical devices

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Daoying Song, Cupertino, CA (US);

Chong Jiang, Cupertino, CA (US);

Byung-Sung Leo Kwak, Portland, OR (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:

Pillsbury Winthrop Shaw Pittman LLP

Primary Examiner:

Jason Berman

Int. Cl.
CPC ...
C23C 14/58 (2006.01); C23C 16/56 (2006.01); H01M 4/04 (2006.01); H01M 4/1391 (2010.01); H01M 4/525 (2010.01); H01M 10/0585 (2010.01); H01M 6/40 (2006.01); H01M 10/0525 (2010.01); H01M 14/00 (2006.01); C23C 14/08 (2006.01); C23C 14/24 (2006.01); C23C 14/34 (2006.01); G02F 1/155 (2006.01); H01M 4/131 (2010.01);
U.S. Cl.
CPC ...
C23C 14/5806 (2013.01); C23C 14/08 (2013.01); C23C 14/24 (2013.01); C23C 14/34 (2013.01); C23C 14/3485 (2013.01); C23C 16/56 (2013.01); G02F 1/155 (2013.01); H01M 4/0404 (2013.01); H01M 4/0423 (2013.01); H01M 4/0426 (2013.01); H01M 4/131 (2013.01); H01M 4/1391 (2013.01); H01M 4/525 (2013.01); H01M 6/40 (2013.01); H01M 10/0525 (2013.01); H01M 10/0585 (2013.01); H01M 14/005 (2013.01); Y02E 60/122 (2013.01); Y02P 70/54 (2015.11);
Abstract

Microwave radiation may be applied to electrochemical devices for rapid thermal processing (RTP) (including annealing, crystallizing, densifying, forming, etc.) of individual layers of the electrochemical devices, as well as device stacks, including bulk and thin film batteries and thin film electrochromic devices. A method of manufacturing an electrochemical device may comprise: depositing a layer of the electrochemical device over a substrate; and microwave annealing the layer, wherein the microwave annealing includes selecting annealing conditions with preferential microwave energy absorption in the layer. An apparatus for forming an electrochemical device may comprise: a first system to deposit an electrochemical device layer over a substrate; and a second system to microwave anneal the layer, wherein the second system is configured to provide preferential microwave energy absorption in the device layer.

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