The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 28, 2017

Filed:

May. 07, 2014
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Juliane Kechele, Stadtbergen, DE;

Simon Dallmeir, Koenigsbrunn, DE;

Sonja Tragl, Augsburg, DE;

Daniel Bichler, Munich, DE;

Bianca Pohl-Klein, Gilching, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 11/77 (2006.01); C04B 35/584 (2006.01); C09K 11/08 (2006.01); C01B 21/06 (2006.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
C09K 11/7734 (2013.01); C01B 21/0602 (2013.01); C01B 21/0605 (2013.01); C04B 35/584 (2013.01); C09K 11/0883 (2013.01); C09K 11/7728 (2013.01); C01P 2002/50 (2013.01); C01P 2002/52 (2013.01); C01P 2004/61 (2013.01); C01P 2004/62 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3852 (2013.01); C04B 2235/3873 (2013.01); C04B 2235/5409 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5463 (2013.01); C04B 2235/5481 (2013.01); H01L 33/502 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/181 (2013.01);
Abstract

A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (CaZnMgSrBaX)SiN, wherein X is an activator that is selected from the group of the lanthanoids and wherein the following applies: 0<a<1 and 0≦b≦1 and 0≦c≦ and 0≦d≦1 and 0≦e≦1. The method includes producing a powdery mixture of starting materials. The starting materials comprise ions of the aforementioned composition. At least silicon nitride having a specific surface area greater than or equal to 9 m/g is selected as a starting material and wherein the silicon nitride comprises alpha silicon nitride or is amorphous. The method also includes heat-treating the mixture under a protective gas atmosphere.


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