The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Jan. 18, 2013
University of Kansas, Lawrence, KS (US);
Trung Van Nguyen, Lawrence, KS (US);
Xuhai Wang, Drexel Hill, PA (US);
UNIVERSITY OF KANSAS, Lawrence, KS (US);
Abstract
A gas diffusion layer having a first major surface and a second major surface which is positioned opposite to said first major surface and an interior between said first and second major surfaces is formed. The gas diffusion layer comprises a porous carbon substrate which is directly fluorinated in the interior and is substantially free of fluorination on at least one of the first major surfaces or the second major surfaces, and preferably both surfaces. The gas diffusion layer may be formed using protective sandwich process during direct fluorination or by physically or chemically removing the C—F atomic layer at the major surfaces, for example by physical plasma etching or chemical reactive ion etching.