The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2017

Filed:

Mar. 11, 2015
Applicant:

Institute of Nuclear Energy Research Atomic Energy Council, Executive Yuan, Taoyuan County, TW;

Inventors:

Min-Chuan Wang, Taoyuan County, TW;

Tian-You Liao, Taoyuan County, TW;

Chih-Pong Huang, Taoyuan County, TW;

Der-Jun Jan, Taoyuan County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/18 (2006.01); H01L 31/077 (2012.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1824 (2013.01); H01L 31/03921 (2013.01); H01L 31/077 (2013.01); H01L 31/1804 (2013.01); H01L 31/1816 (2013.01); H01L 31/1884 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

The present invention relates to a microcrystalline silicon thin film solar cell and the manufacturing method thereof, using which not only the crystallinity of a microcrystalline silicon thin film that is to be formed by the manufacturing method can be controlled and adjusted at will and the defects in the microcrystalline silicon thin film can be fixed, but also the device characteristic degradation due to chamber contamination happening in the manufacturing process, such as plasma enhanced chemical vapor deposition (PECVD), can be eliminated effectively.


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