The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2017

Filed:

Aug. 14, 2015
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Wei Liu, Beijing, CN;

Chunsheng Jiang, Beijing, CN;

Lung Pao Hsin, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 21/44 (2006.01); H01L 21/4763 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78618 (2013.01); H01L 21/44 (2013.01); H01L 21/47635 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01);
Abstract

A thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The thin film transistor includes: an active layer, a source-drain metal layer and a diffusion blocking layer located between the active layer and the source-drain metal layer, wherein, the source-drain metal layer includes a source electrode and a drain electrode; the diffusion blocking layer includes a source blocking part corresponding to a position of the source electrode and a drain blocking part corresponding to a position of the drain electrode; and the diffusion blocking layer is doped with different concentrations of nitrogen from a side close to the source-drain metal layer to a side close to the active layer.


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