The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Aug. 15, 2016
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Hitoshi Matsuura, Kanagawa, JP;
Yoshito Nakazawa, Kanagawa, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
In characteristic test measurements of double-gate-in-trench p-channel power MOSFETs each having a ppolysilicon gate electrode and a pfield plate electrode in a trench, which were fabricated according to common design techniques, it has been found that, under conditions where a negative gate bias is applied continuously at high temperature with respect to the substrate, an absolute value of threshold voltage tends to increase steeply after the lapse of a certain period of stress application time. To solve this problem, the present invention provides a p-channel power MOSFET having an n-type polysilicon linear field plate electrode and an n-type polysilicon linear gate electrode in each trench part thereof.