The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Jan. 27, 2015
Applicant:
Iucf-hyu, Seoul, KR;
Inventors:
Jea Gun Park, Seongnam-Si, KR;
Tea Hun Shim, Suwon-Si, KR;
Seung Hyun Song, Seoul, KR;
Du Yeong Lee, Seoul, KR;
Assignee:
IUCF-HYU, , KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 21/225 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/0245 (2013.01); H01L 21/02236 (2013.01); H01L 21/02238 (2013.01); H01L 21/02255 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02532 (2013.01); H01L 21/02587 (2013.01); H01L 21/02664 (2013.01); H01L 21/2257 (2013.01); H01L 29/16 (2013.01); H01L 29/785 (2013.01); H01L 29/7854 (2013.01);
Abstract
The present invention suggests a substrate manufacturing method and a manufacturing method of a semiconductor device comprising: providing a SOI structure having an insulation layer and a silicon layer laminated on a substrate; laminating to form a silicon germanium layer and a capping silicon layer on the SOI structure; implementing oxidation process at two or more temperatures and heat treatment process at least once during the oxidation process to form a germanium cohesion layer and a silicon dioxide layer; and removing the silicon dioxide layer.