The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Jun. 02, 2015
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Inventors:
Fuminori Mitsuhashi, Itami, JP;
Yusuke Yoshizumi, Itami, JP;
Takashi Ishizuka, Itami, JP;
Masaki Ueno, Itami, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/36 (2006.01); H01L 29/20 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 21/285 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/36 (2013.01); H01L 21/28581 (2013.01); H01L 29/0615 (2013.01); H01L 29/2003 (2013.01); H01L 29/66143 (2013.01); H01L 29/872 (2013.01);
Abstract
A layered semiconductor includes a base layer including a substrate and a buffer layer, and a drift layer which is disposed on the base layer and is made of GaN and whose conductivity type is an n-type. The drift layer has an average n-type impurity concentration of 1.5×10cmor less in a radial direction of the substrate, and the difference between the maximum n-type impurity concentration and the minimum n-type impurity concentration is 1.5×10cmor less.