The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Apr. 01, 2016
Infineon Technologies Austria Ag, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A super junction semiconductor device includes an impurity layer of a first (conductivity) type formed in a semiconductor portion having first and second parallel surfaces, a super junction structure between the first surface and impurity layer and including first columns of the first type and second columns of a second (conductivity) type, a body zone of the second type formed between the first surface and one of the second columns at least partially in the vertical projection of the second columns, and a field extension zone of the second type electrically connected to the body zone and arranged in the vertical projection of one of the columns. An area impurity density in the field extension zone is between 1×10and 5×10cm. A mean net impurity concentration in the field extension zone is higher than in the second columns and lower than in the body zone.