The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2017

Filed:

Jan. 26, 2016
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Tsung-Hsien Yang, Hsinchu, TW;

Han-Min Wu, Hsinchu, TW;

Jhih-Sian Wang, Hsinchu, TW;

Yi-Ming Chen, Hsinchu, TW;

Tzu-Ghieh Hsu, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/207 (2006.01); H01L 21/00 (2006.01); H01L 27/15 (2006.01); H01L 33/08 (2010.01); H01L 33/38 (2010.01); H01L 29/06 (2006.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 27/15 (2013.01); H01L 27/156 (2013.01); H01L 29/0649 (2013.01); H01L 33/08 (2013.01); H01L 33/385 (2013.01); H01L 33/0079 (2013.01); H01L 33/22 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01);
Abstract

A light-emitting diode is provided. The light-emitting diode comprises: a first light-emitting structure, comprising: a first area; a second area; a first isolation path having an electrode isolation layer between the first area and the second area; an electrode contact layer covering the first area; and an electrical connecting structure covering the second area; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and the electrode contact layer covers a sidewall of the first area.


Find Patent Forward Citations

Loading…