The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Jan. 07, 2016
Applicant:
Samsung Display Co., Ltd, Yongin, Gyeonggi-do, KR;
Inventors:
Myung-Kwan Ryu, Yongin-si, KR;
Eok-Su Kim, Seoul, KR;
Kyoung Seok Son, Seoul, KR;
Seung-Ha Choi, Suwon-si, KR;
Sho-Yeon Kim, Hwaseong-si, KR;
Hyun Kim, Suwon-si, KR;
Eun-Hye Park, Incheon, KR;
Byung-Hwan Chu, Seoul, KR;
Assignee:
Samsung Display Co., Ltd., Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1248 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/41733 (2013.01); H01L 29/78696 (2013.01);
Abstract
A thin film transistor substrate includes a gate electrode, a channel layer overlapping the gate electrode, a source electrode overlapping the channel layer, a drain electrode overlapping the channel layer and the source electrode, and a spacer disposed between the source electrode and the drain electrode.