The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2017

Filed:

Nov. 03, 2016
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Young-Wook Lee, Suwon-si, KR;

Woo-Geun Lee, Yongin-si, KR;

Ki-Won Kim, Suwon-si, KR;

Hyun-Jung Lee, Yangju-si, KR;

Ji-Soo Oh, Uiwang-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); H01L 21/76834 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 27/1262 (2013.01); H01L 27/1288 (2013.01); H01L 29/78693 (2013.01); H01L 29/7869 (2013.01);
Abstract

A substrate including gate wirings including gate line and a gate electrode disposed on the substrate, a storage line disposed on the same layer as the gate wirings, a gate insulating layer disposed on the gate wirings and the storage line, an oxide semiconductor layer pattern disposed on the gate insulating layer, data wirings including a data line crossing the gate line, a source electrode disposed on one side of the oxide semiconductor layer pattern, and a drain electrode disposed on another side of the oxide semiconductor layer, and an etch stopper including a first etch stopper portion disposed between the storage line and the data line and partially overlapping both the data line and the storage line.


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