The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2017

Filed:

Dec. 10, 2015
Applicant:

University-industry Cooperation Group of Kyung Hee University, Yongin, Gyeonggi-Do, KR;

Inventors:

Jin Jang, Seoul, KR;

Man Ju Seok, Seoul, KR;

Jae Gwang Um, Seoul, KR;

Su Hui Lee, Seoul, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 29/24 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 21/563 (2013.01); H01L 23/3171 (2013.01); H01L 27/124 (2013.01); H01L 27/1259 (2013.01); H01L 29/24 (2013.01); H01L 29/41733 (2013.01); H01L 29/42376 (2013.01); H01L 29/42384 (2013.01); H01L 29/7869 (2013.01); H01L 29/78648 (2013.01); H01L 29/66969 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An oxide semiconductor transistor used in a pixel element of a display device and a method of manufacturing the same are disclosed. The oxide semiconductor transistor used in a pixel element of a display device comprises a substrate, a first gate electrode located on the substrate, a source electrode and a drain electrode located on the first gate electrode and a second gate electrode located on the source electrode and the drain electrode. Here, the first gate electrode is electrically connected to the second gate electrode, the same voltage is applied to the first gate electrode and the second gate electrode, and a width of the second gate electrode is shorter than a length between the source electrode and the drain electrode.


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