The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9825054 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 21, 2017

Filed:

Sep. 21, 2016
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Kotaro Fujii, Yokkaichi, JP;

Hideaki Aochi, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 29/792 (2006.01); H01L 21/8238 (2006.01); H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 23/5283 (2013.01); H01L 27/11565 (2013.01);
Abstract

The memory string comprises: a first semiconductor layer; a stacked body in which a plurality of conductive layers and a plurality of interlayer insulating layers are stacked along a first direction above the first semiconductor layer; and a second semiconductor layer having a longitudinal direction along the first direction and provided above the first semiconductor layer. The memory insulating layer includes a charge accumulation layer between the second semiconductor layer and the plurality of the conductive layers. The core insulating layer has a longitudinal direction along the first direction, and is provided in the second semiconductor layer. The oxide film layer is provided between the core insulating layer and the second semiconductor layer.


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