The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Aug. 15, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
William L. Nicoll, Pleasant Valley, NY (US);
Byeong Y. Kim, Lagrangeville, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 27/12 (2006.01); H01L 29/792 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10826 (2013.01); H01L 21/31111 (2013.01); H01L 27/10832 (2013.01); H01L 27/10879 (2013.01); H01L 27/1211 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/785 (2013.01); H01L 29/792 (2013.01);
Abstract
Various embodiments include methods and integrated circuit (IC) structures. In some cases, an IC can include: a substrate; a deep trench within the substrate; a buried oxide (BOX) layer adjacent the deep trench; a first fin structure over the deep trench; a second fin structure over the BOX layer; an ONO layer over the first fin structure; and a gate electrode contacting the ONO layer.