The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Jun. 29, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 27/092 (2006.01); H01L 29/161 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 21/8256 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/02532 (2013.01); H01L 21/8256 (2013.01); H01L 21/823814 (2013.01); H01L 29/0847 (2013.01); H01L 29/1079 (2013.01); H01L 29/161 (2013.01); H01L 29/42364 (2013.01); H01L 29/7833 (2013.01);
Abstract
An integrated circuit device includes a substrate including a first region and a second region, a first transistor in the first region, the first transistor being an N-type transistor and including a first silicon-germanium layer on the substrate, and a first gate electrode on the first silicon-germanium layer, and a second transistor in the second region and including a second gate electrode, the second transistor not having a silicon-germanium layer between the substrate and the second gate electrode.