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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9825025 B1

PDFFull Text
Date of Patent:
Nov. 21, 2017

Filed:

Feb. 09, 2017

Semiconductor device and method of manufacturing semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventor:

Naoki Kumagai, Nagano, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:

Chen Yoshimura LLP

Primary Examiner:

Tu-Tu Ho

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 21/761 (2006.01); H01L 29/10 (2006.01); H01L 29/872 (2006.01); H01L 21/763 (2006.01); H01L 21/76 (2006.01); H01L 29/16 (2006.01); H01L 21/82 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0617 (2013.01); H01L 21/761 (2013.01); H01L 21/7602 (2013.01); H01L 21/763 (2013.01); H01L 21/8213 (2013.01); H01L 27/0629 (2013.01); H01L 29/0696 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/402 (2013.01); H01L 29/7803 (2013.01); H01L 29/7806 (2013.01); H01L 29/872 (2013.01);
Abstract

A semiconductor device includes a first drain region that is made primarily of SiC, a drift layer, a channel region, a first source region, a source electrode that is formed on the first source region, a second drain region that is connected to the first source region, a second source region that is formed separated from the second drain region, a first floating electrode that is connected to the second source region and to the channel region, first gate electrodes, and a second gate electrode that is connected to the first gate electrodes.

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Kumagai, Naoki. (2017). Semiconductor device and method of manufacturing semiconductor device (U.S. Patent No. 9825025). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9825025

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