The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Jun. 27, 2016
Applicant:
Sony Corporation, Tokyo, JP;
Inventor:
Kazumasa Kohama, Tokyo, JP;
Assignee:
SONY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 23/66 (2006.01); H01L 27/12 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 29/20 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01); H01L 29/201 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 23/3114 (2013.01); H01L 23/4952 (2013.01); H01L 23/49513 (2013.01); H01L 23/49541 (2013.01); H01L 27/0605 (2013.01); H01L 27/0629 (2013.01); H01L 27/1203 (2013.01); H01L 28/20 (2013.01); H01L 29/20 (2013.01); H01L 29/201 (2013.01); H01L 29/205 (2013.01); H01L 29/7786 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 2223/6683 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/49175 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/13062 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1423 (2013.01); H01L 2924/19041 (2013.01);
Abstract
A high-frequency device having a switching circuit including a semiconductor substrate; a first high-frequency input/output terminal; a second high-frequency input/output terminal; a control signal input terminal; a power terminal; a ground terminal; an insulating portion disposed on a main surface of the semiconductor substrate; and a voltage-applying electrode for applying a predetermined positive voltage from the power electrode to the semiconductor substrate, wherein the switching circuit includes a field-effect transistor disposed in an active region of the semiconductor substrate.