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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9824944 B1

PDFFull Text
Date of Patent:
Nov. 21, 2017

Filed:

Sep. 29, 2016

Semiconductor device

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Bunji Yasumura, Kanagawa, JP;

Fumio Tsuchiya, Kanagawa, JP;

Hisanori Ito, Kanagawa, JP;

Takuji Ide, Kanagawa, JP;

Naoki Kawanabe, Kanagawa, JP;

Masanao Sato, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Tokyo, JP;

Attorney:

Shapiro, Gabor and Rosenberger, PLLC

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Valerie N Newton

Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 22/32 (2013.01); H01L 23/3114 (2013.01); H01L 23/49816 (2013.01); H01L 23/49838 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/13 (2013.01); H01L 24/48 (2013.01); H01L 24/85 (2013.01); H01L 24/45 (2013.01); H01L 24/73 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/0613 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/4845 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48157 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/48624 (2013.01); H01L 2224/49171 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/85203 (2013.01); H01L 2224/85205 (2013.01); H01L 2224/85207 (2013.01); H01L 2224/85399 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01025 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01051 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01083 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/14 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01); H01L 2924/20752 (2013.01); H01L 2924/30107 (2013.01); H01L 2924/3512 (2013.01);
Abstract

A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.

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