The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
Dec. 22, 2014
Applicant:
Joled Inc., Tokyo, JP;
Inventor:
Tohru Saitoh, Tokyo, JP;
Assignee:
JOLED INC., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 51/50 (2006.01); G09F 9/30 (2006.01); H01L 21/28 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/441 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); G09F 9/30 (2013.01); H01L 21/02068 (2013.01); H01L 21/28 (2013.01); H01L 21/441 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01); H01L 51/50 (2013.01);
Abstract
A method of manufacturing a thin-film transistor (TFT) substrate including a thin-film transistor having a CuMn alloy film. The method includes controlling a contact resistance of a surface of the CuMn alloy film on the basis of a contact angle of the surface of the CuMn alloy film.