The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2017

Filed:

Aug. 11, 2016
Applicant:

Sandia Corporation, Albuquerque, NM (US);

Inventors:

Kenneth Wojciechowski, Albuquerque, NM (US);

Roy Olsson, Albuquerque, NM (US);

Peggy J. Clews, Tijeras, NM (US);

Todd Bauer, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); B81C 1/00 (2006.01); B81B 7/00 (2006.01); H01L 21/8234 (2006.01); H01L 21/311 (2006.01); H01L 21/306 (2006.01); H01L 21/84 (2006.01); H01L 21/762 (2006.01); H01L 21/3213 (2006.01); H01L 21/764 (2006.01); H01L 23/34 (2006.01); H01L 21/48 (2006.01); H01L 41/047 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/02178 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/3213 (2013.01); H01L 21/762 (2013.01); H01L 21/764 (2013.01); H01L 21/84 (2013.01); H01L 23/34 (2013.01);
Abstract

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.


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