The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 2017
Filed:
May. 17, 2012
Applicants:
Adrian Kitai, Mississauga, CA;
Haoling Yu, Toronto, CA;
BO LI, Hamilton, CA;
Inventors:
Assignee:
McMaster University, Hamilton, Ontario, CA;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/06 (2006.01); C30B 9/10 (2006.01); C30B 19/12 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02634 (2013.01); C30B 9/10 (2013.01); C30B 19/12 (2013.01); C30B 29/06 (2013.01); H01L 21/0237 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02532 (2013.01); H01L 21/02625 (2013.01); H01L 21/02628 (2013.01); H01L 21/02645 (2013.01); H01L 21/02658 (2013.01); H01L 29/0657 (2013.01);
Abstract
A method for growing semiconductor wafers by lateral diffusion liquid phase epitaxy is described. Also provided are a refractory device for practicing the disclosed method and semiconductor wafers prepared by the disclosed method and device. The disclosed method and device allow for significant cost and material waste savings over current semiconductor production technologies.
Kitai, Adrian. (2017). Semiconductor formation by lateral diffusion liquid phase epitaxy (U.S. Patent No. 9824892). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9824892
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile