The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2017

Filed:

Mar. 31, 2015
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Hyung-Min Lee, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 29/52 (2006.01); G11C 16/34 (2006.01); G11C 29/42 (2006.01); G06F 11/10 (2006.01); G11C 29/54 (2006.01);
U.S. Cl.
CPC ...
G11C 29/52 (2013.01); G06F 11/1048 (2013.01); G11C 16/3418 (2013.01); G11C 29/42 (2013.01);
Abstract

A nonvolatile memory system includes a nonvolatile memory device including a distribution table suitable for storing recovery read level intervals that are set by being changed through multiple stages according to a distribution value of threshold voltage levels of a plurality of memory cells, measured at a reference read level, is changed through the multiple stages; and a memory controller suitable for reading measurement data from the memory cells by additionally using a measurement read level, searching for a difference value between the normal data and the measurement data from the multiple stages of distribution values stored in the distribution table, and recovering the normal data based on a recovery read level interval corresponding to a searched distribution value, when an error occurs in normal data read from the memory cells by using the reference read level.


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