The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2017

Filed:

Sep. 02, 2015
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Tamiyu Kato, Tokyo, JP;

Takanobu Suzuki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 16/28 (2006.01); G11C 7/06 (2006.01); G11C 7/18 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 7/062 (2013.01); G11C 7/18 (2013.01); G11C 16/10 (2013.01); G11C 2207/005 (2013.01); G11C 2207/063 (2013.01);
Abstract

The present invention provides a semiconductor device including a nonvolatile memory of which the memory size of a data area and the memory size of a code area can be freely changed. The semiconductor device according to one embodiment includes a nonvolatile memory which can switch between a reference current reading system which performs data read by comparing a current flowing through a first memory cell as a read target and the reference current and a complementary reading system which performs data read by comparing currents flowing through a first memory cell and a second memory cell storing complementary data, as a read target.


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